Self-diffusion in extrinsic silicon using isotopically enriched 30Si layer

被引：8
作者：
Nakabayashi, Y
Osman, HI
Segawa, T
Saito, K
Matsumoto, S
Murota, J
Wada, K
Abe, T
机构：
[1] Keio Univ, Dept Elect & Elect Engn, Kohoku Ku, Yokohama, Kanagawa 2238522, Japan
[2] Tohoku Univ, Elect Commun Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan
[3] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
[4] Sin Etsu Hosp, Isobe R&D Ctr, Gunma 3970127, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2001年 / 40卷 / 3A期
关键词：
self-diffusion; stable Si-30 tracer; doping effect; silicon; isotopic heterostructure;
D O I：
10.1143/JJAP.40.L181
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Si self-diffusion coefficients were measured in intrinsic and extrinsic silicon at 900 degreesC using an isotopically enriched Si-30 layer. Si-30 profiles are determined by secondary ion mass spectrometry, Si self-diffusion is enhanced in a heavily B-doped sample, but differs little from intrinsic Si in heavily As or Sb-doped samples.
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页码：L181 / L182
页数：2
相关论文
共 10 条
[1]   Silicon self-diffusion in isotope heterostructures [J].
Bracht, H ;
Haller, EE ;
Clark-Phelps, R .
PHYSICAL REVIEW LETTERS, 1998, 81 (02) :393-396
[2]   SELF-DIFFUSION IN INTRINSIC AND EXTRINSIC SILICON [J].
FAIRFIEL.JM ;
MASTERS, BJ .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (08) :3148-&
[3]   METHOD FOR DETERMINING SILICON DIFFUSION COEFFICIENTS IN SILICON AND IN SOME SILICON COMPOUNDS [J].
GHOSHTAGORE, RN .
PHYSICAL REVIEW LETTERS, 1966, 16 (20) :890-+
[4]  
Hu S. M., 1973, ATOMIC DIFFUSION SEM, P217
[5]   SILICON SELF-DIFFUSION - (CZOCHRALSKI SINGLE CRYSTAL - SI31 - TEMPERATURE DEPENDENCE - ACTIVATION ENERGY 118.5 KCAL/MOLE - 1100 TO 1300 DEGREES C - E) [J].
MASTERS, BJ ;
FAIRFIELD, JM .
APPLIED PHYSICS LETTERS, 1966, 8 (11) :280-+
[6]  
Mayer H. J., 1977, International Conference on Radiation Effects in Semiconductors, P186
[7]  
NAKABAYASHI Y, 2001, IN PRESS JPN J APPL, V40
[8]   SELF DIFFUSION IN INTRINSIC SILICON [J].
PEART, RF .
PHYSICA STATUS SOLIDI, 1966, 15 (02) :K119-&
[9]  
Rodriguez N., 2012, HDB SERIES SEMICONDU, V33, P1717
[10]   Experimental evidence for a dual vacancy interstitial mechanism of self-diffusion in silicon [J].
Ural, A ;
Griffin, PB ;
Plummer, JD .
APPLIED PHYSICS LETTERS, 1998, 73 (12) :1706-1708
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