Electronic fingerprints of Cr and V dopants in the topological insulator Sb2Te3

被引：20
|
作者：
Zhang, Wenhan [1 ]
West, Damien [2 ]
Lee, Seng Huat [3 ,4 ]
Qiu, Yunsheng [3 ]
Chang, Cui-Zu [5 ,6 ]
Moodera, Jagadeesh S. [6 ]
San Hor, Yew [3 ]
Zhang, Shengbai [2 ]
Wu, Weida [1 ]
机构：
[1] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA
[2] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astronomy, Troy, NY 12180 USA
[3] Missouri Univ Sci & Technol, Dept Phys, Rolla, MO 65409 USA
[4] Penn State Univ, Mat Res Inst, Crystal Consortium 2D, University Pk, PA 16802 USA
[5] Penn State Univ, Dept Phys, University Pk, PA 16802 USA
[6] MIT, Francis Bitter Magnet Lab, 77 Massachusetts Ave, Cambridge, MA 02139 USA
来源：
PHYSICAL REVIEW B | 2018年 / 98卷 / 11期
关键词：
FERROMAGNETISM; STATE;
D O I：
10.1103/PhysRevB.98.115165
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
By combining scanning tunneling microscopy/spectroscopy and first-principles calculations, we systematically study the local electronic states of magnetic dopants V and Cr in the topological insulator (TI) Sb2Te3. Spectroscopic imaging shows diverse local defect states between Cr and V, which agree with our first-principle calculations. The unique spectroscopic features of V and Cr dopants provide electronic fingerprints for the codoped magnetic TI samples with the enhanced quantum anomalous Hall effect. Our results also facilitate the exploration of the underlying mechanism of the enhanced quantum anomalous Hall temperature in Cr/V codoped TIs.
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页数：6
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