Strain in pseudomorphic monoclinic Ga2O3-based heterostructures

被引：12

作者：

Grundmann, Marius ^{[1
]}

机构：

[1] Univ Leipzig, Fak Phys & Geowissensch, Felix Bloch Inst Festkorperphys, Linnestr 5, D-04103 Leipzig, Germany

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2017年 / 254卷 / 09期

关键词：

Ga2O3; heterostructure; monoclinic; pseudomorphic; strain; stress; THIN-FILMS; GROWTH; LAYERS;

D O I：

10.1002/pssb.201700134

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We calculate analytically, the epitaxial in-plane and out-ofplane strains for pseudomorphic growth of monoclinic heterostructures for various substrate orientations, namely the (010) plane and all (h0l) planes, parametrized by the rotation angle. against the (001) plane. Numerical examples are given for the sesquioxide semiconductor systems (In0.1Ga0.9)(2)O-3/Ga2O3 (the alloy being under compressive strain) and (Al0.1Ga0.9)(2)O-3/Ga2O3 (tensile strain). Also, we calculate the strain energy density of the epilayer. By setting the monoclinic angle of the unit cell to p/2, our theory applies also to the simpler case of orthorhombic heterostructures. (C) 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页数：7

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