Sb2Te3-Ta2O5 nano-composite films for low-power phase-change memory application

被引：11

作者：

Song, Sannian ^{[1
]}

Song, Zhitang ^{[1
]}

Lu, Yegang ^{[1
]}

Liu, Bo ^{[1
]}

Wu, Liangcai ^{[1
]}

Feng, Songlin ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

来源：

MATERIALS LETTERS | 2010年 / 64卷 / 24期

基金：

中国博士后科学基金;

关键词：

Thin films; Composite materials; Electrical properties; Nanocomposites; THIN-FILMS; TRANSITIONS; GE2SB2TE5;

D O I：

10.1016/j.matlet.2010.09.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Sb2Te3-Ta2O5 nano-composite films were deposited by the cosputtering of Sb2Te3 and Ta2O5 targets using radio frequency magnetron sputtering system at room temperature. A phase-change random access memory (PCRAM) device based on the Sb2Te3-Ta2O5 films was successfully fabricated. Compared to a pure Ge2Sb2Te5 based PCRAM cell, the reset voltage of the Sb2Te3-Ta2O5 based cell was obviously reduced, which was attributed to the reduced thermal conductivity and lower melting point of the Sb2Te3-Ta2O5 films. In addition, the device with the Sb2Te3-Ta2O5 layer could work with much shorter pulse widths for both SET and RESET, suggesting that the Sb2Te3-Ta2O5 based compounds are promising candidates for low-power and fast-speed PCRAM application. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：2728 / 2730

页数：3

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