Latch-Up Prevention With Autodetector Circuit to Stop Latch-Up Occurrence in CMOS-Integrated Circuits

被引：2

作者：

Jiang, Zi-Hong ^{[1
]}

Ker, Ming-Dou ^{[1
]}

机构：

[1] Natl Yang Ming Chiao Tung Univ, Inst Elect, Hsinchu 300093, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY | 2022年 / 64卷 / 06期

关键词：

Detectors; Ring oscillators; Power supplies; Logic gates; Inverters; Integrated circuits; Digital audio players; I; O pad; latch-up; latch-up prevention; low dropout regulator (LDO); silicon-controlled rectifier (SCR); ACTIVE GUARD RING;

D O I：

10.1109/TEMC.2022.3202806

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Due to the parasitic silicon-controlled-rectifier structure, latch-up issues have been an inherent problem with bulk CMOS ICs. In this work, a novel design of an autodetector circuit to stop latch-up occurrence for latch-up prevention was proposed and successfully verified in a 0.18-mu m 1.8/3.3-V CMOS technology. By adding a hole/electron detector between the input/output (I/O) pads and internal circuitry, it is used to detect the latch-up trigger current injected toward internal circuits. When an abnormal current is injected from the I/O pads to the internal circuits, this event can be detected by the proposed autodetector circuit.

引用

页码：1785 / 1792

页数：8

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