Influence of oxygen-plasma posttreatment on the properties of SiO2 films prepared by the electron-beam evaporation method

被引：1

作者：

Guo, Y. J. ^{[1
,2
]}

Zu, X. T. ^{[1
]}

Jiang, X. D. ^{[2
]}

Yuan, X. D. ^{[2
]}

Lv, H. B. ^{[2
]}

机构：

[1] Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Peoples R China

[2] China Acad Engn Phys, Res Ctr Laser Fus, Mianyang 621900, Peoples R China

来源：

OPTIK | 2010年 / 121卷 / 09期

关键词：

Laser-induced damage threshold; Film; Ion posttreatment; Micro-defect; INDUCED DAMAGE THRESHOLD; FILMS;

D O I：

10.1016/j.ijleo.2008.09.033

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

SiO2 films were deposited on K9 substrate by the electron-beam evaporation method. The influence of oxygen-plasma posttreatment on the properties of SiO2 films was investigated. After oxygen-plasma treatment, it was found that the microdefect density of films reduced. We deduced that the absorption of films also reduced. The treated sample exhibited higher LIDT value compared with the as-deposited sample. However, this study is the preliminary work and optimization by this method will be discussed in our future work. (C) 2008 Elsevier GmbH. All rights reserved.

引用

页码：839 / 842

页数：4

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