Effect of Ni-Cu substrates on phase hexagonal and cubic boron nitride selection of thin films

被引:5
作者
Kotake, S
Hasegawa, T
Kamiya, K
Suzuki, Y
Masui, T
Kangawa, Y
Nakamura, K
Ito, T
机构
[1] Mie Univ, Dept Mech Engn, Tsu, Mie 5148507, Japan
[2] Mie Prefectural Res Inst, Mech & Elect Div, Tsu, Mie 5140819, Japan
[3] Tokyo Univ Agr & Technol, Dept Appl Chem, Tokyo 1848588, Japan
[4] Mie Univ, Dept Engn Phys, Tsu, Mie 5148507, Japan
关键词
cubic and hexagonal boron nitride; reaction RF sputtering; lattice mismatch; metal-semiconductor inter-faces; nickel and copper alloy;
D O I
10.1016/S0169-4332(03)00514-2
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this study, the dependence of the phase selection of BN on the lattice parameter and the crystal structure of the substrate was clarified. BN thin film was prepared by reaction RF sputtering method on polycrystalline Ni-Cu complete solid solution alloy. Using empirical potentials, the polytypes of BN thin films were systematically investigated by considering lattice constraint due to various interface atomic arrangements and orientations such as c-BN or h-BN on cubic (0 0 1) or (1 1 1) substrates. From IR spectrum, merely c-BN phase was observed from the specimen on Cu and Ni0.8-Cu0.2 alloy. Moreover, the empirical potential calculations reveal that c-BN thin films on (0 0 1) substrates can be stabilized in the substrate lattice parameter of 3.2 < a < 4.4 Angstrom including Cu and Ni at both thin film and interface regions. From these experimental and calculated results, the strain energy at the semiconductor-metal interface proved to be dominant factor for the phase selection of BN thin films. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:72 / 77
页数:6
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