The transition from 3C SiC(111) to graphene captured by Ultra High Vacuum Scanning Tunneling Microscopy

被引：16

作者：

Gupta, B. ^{[1
,2
]}

Placidi, E. ^{[3
,4
]}

Hogan, C. ^{[3
,4
]}

Mishra, N. ^{[5
]}

Iacopi, F. ^{[5
]}

Motta, N. ^{[1
,2
]}

机构：

[1] Queensland Univ Technol, Sch Chem Phys & Mech Engn, Brisbane, Qld 4001, Australia

[2] Queensland Univ Technol, Inst Future Environm, Brisbane, Qld 4001, Australia

[3] CNR, Ist Struttura Mat, I-00133 Rome, Italy

[4] Univ Roma Tor Vergata, Dipartimento Fis, I-00133 Rome, Italy

[5] Griffith Univ, Queensland Micro & Nanotechnol Ctr, Nathan Campus, Qld 4111, Australia

来源：

CARBON | 2015年 / 91卷

基金：

澳大利亚研究理事会;

关键词：

EPITAXIAL GRAPHENE; SURFACE-STRUCTURE; SIC; 0001; 6H-SIC(0001); RECONSTRUCTION; GROWTH; 3C-SIC(111); MORPHOLOGY; LAYERS;

D O I：

10.1016/j.carbon.2015.05.011

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this paper we clarify the transformation mechanism of 3C-SiC into graphene upon thermal decomposition, by a combination of high resolution Scanning Tunneling Microscopy (STM) images and first principle calculations. We studied the transition from 3C-SiC to graphene by high temperature annealing of C-terminated 3C SiC (111)/Si (111) samples in Ultra High Vacuum. By using STM we were able to observe very clear atomic resolution images of the transition from SiC (root 3 x root 3)R30 degrees to a new intermediate stage SiC (3/2 x root 3)R30 degrees (very close to the graphene (2 x 2) reconstruction) after annealing at 1250 degrees C. We also obtained images of the transformation of the intermediate structure into a (1 x 1) monolayer graphene, caused by further sublimation of atoms in the subsurface layer. We have interpreted the results by using Density Functional Theory - Local Density Approximation calculations, which give full account of the SiC (root 3 x root 3)R30 degrees reconstruction, but fail to describe the SIC (3/2 x root 3)R30 degrees structure due to its incommensurability with the 3C-SiC(111) lattice. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：378 / 385

页数：8

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