UV-Vis-NIR photodetector based on monolayer MoS2

被引：47
作者：
Zhou, Yong Heng [1 ]
An, He Nan [1 ]
Gao, Cheng [1 ]
Zheng, Zhao Qiang [2 ]
Wang, Bing [1 ]
机构：
[1] Shenzhen Univ, Coll Elect Sci & Technol, Inst Micronano Optoelect Technol, Shenzhen Key Lab Micro nano Photon Informat Techn, Shenzhen 518060, Guangdong, Peoples R China
[2] Guangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Guangdong, Peoples R China
来源：
MATERIALS LETTERS | 2019年 / 237卷
基金：
中国国家自然科学基金;
关键词：
Chemical vapor deposition; Monolayer MoS2; Photodetector; Optical materials and properties; Electrical properties; HIGH-PERFORMANCE; PHOTOTRANSISTORS; HETEROJUNCTION; ULTRAVIOLET;
D O I：
10.1016/j.matlet.2018.11.112
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Two-dimensional layers of metal dichalcogenides have attracted much attention because of their ultrathin thickness and potential applications in electronics and optoelectronics. In this regard, we further explore the optoelectronic properties of monolayer MoS2 synthesized by chemical vapor deposition on sapphire substrate and contacted the Au electrode by lithographie method for applications in photodetectors. The device exhibits broadband photoresponse (UV-Vis-NIR), a lower subthreshold swing (0.5 V), higher detectivity (10(10) Jones) and superior responsivity (0.0084 A/W). We believe that this work provides important scientific insights for photoelectric response properties of emerging atomically layered 2D materials for optoelectronic applications. (C) 2018 Elsevier B.V. All rights reserved.
引用
收藏
页码：298 / 302
页数：5
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