Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy

被引：121
作者：
Langereis, E. [1 ]
Keijmel, J. [1 ]
de Sanden, M. C. M. van [1 ]
Kessels, W. M. M. [1 ]
机构：
[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 23期
关键词：
D O I：
10.1063/1.2940598
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The surface groups created during plasma-assisted atomic layer deposition (ALD) of Al(2)O(3) were studied by infrared spectroscopy. For temperatures in the range of 25-150 degrees C, -CH(3) and -OH were unveiled as dominant surface groups after the Al(CH(3))(3) precursor and O(2) plasma half-cycles, respectively. At lower temperatures more -OH and C-related impurities were found to be incorporated in the Al(2)O(3) film, but the impurity level could be reduced by prolonging the plasma exposure. The results demonstrate that -OH surface groups rule the surface chemistry of the Al(2)O(3) process and likely that of plasma-assisted ALD of metal oxides from organometallic precursors in general. (C) 2008 American Institute of Physics.
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