High-voltage power MOSFETs reached almost to the silicon limit

被引：24

作者：

Kobayashi, T ^{[1
]}

Abe, H ^{[1
]}

Niimura, Y ^{[1
]}

Yamada, T ^{[1
]}

Kurosaki, A ^{[1
]}

Hosen, T ^{[1
]}

Fujihira, T ^{[1
]}

机构：

[1] Fuji Hitach Power Semicon Co Ltd, Matsumoto Branch, Matsumoto, Nagano 3900821, Japan

来源：

ISPSD'01: PROCEEDINGS OF THE 13TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2001年

关键词：

D O I：

10.1109/ISPSD.2001.934646

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

New technologies for non-superjunction high-voltage power MOSFETs have been developed and experimentally confirmed. R(ON)(.)A achieved are as low as 110% of the silicon limit and R(ON)(.)Q(GD) achieved are only 50 to 60% of the best data found. Due to the drastic improvement of R(ON)(.)Q(GD), the developed devices have Improved the power conversion efficiency of a fly-back converter by several percent. The total cost over performance of the power conversion systems can be improved by utilizing the developed technologies.

引用

页码：435 / 438

页数：4

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