Control of selective and catalyst-free growth of Sb2Te3 and Te nanowires from sputter-deposited Al-Sb-Te thin films

被引:8
作者
Kim, Byeong Geun [1 ]
Kim, Byung-Sung [2 ,3 ]
Jeong, Seong-Min [4 ]
Choi, Soon-Mok [4 ]
Whang, Dongmok [2 ,3 ]
Lee, Hong-Lim [1 ]
Hyun, Sang-Hoon [1 ]
机构
[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
[2] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea
[3] Sungkyunkwan Univ, Sungkyunkwan Adv Inst Nanotechnol, Suwon 440746, South Korea
[4] KICET, Seoul 153801, South Korea
关键词
TELLURIUM;
D O I
10.1039/c2ce25290b
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report the selective and catalyst-free growth of Sb2Te3 and Te nanowires by thermal annealing of sputter-deposited Al-Sb-Te thin films. Sb2Te3 and Te nanowires were grown at low temperature (similar to 250 degrees C) under N-2 and O-2 gas atmospheres, respectively, and they were extruded spontaneously on the surfaces of Al-Sb-Te films with increasing annealing temperature.
引用
收藏
页码:4255 / 4258
页数:4
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