Control of selective and catalyst-free growth of Sb2Te3 and Te nanowires from sputter-deposited Al-Sb-Te thin films

被引：8

作者：

Kim, Byeong Geun ^{[1
]}

Kim, Byung-Sung ^{[2
,3
]}

Jeong, Seong-Min ^{[4
]}

Choi, Soon-Mok ^{[4
]}

Whang, Dongmok ^{[2
,3
]}

Lee, Hong-Lim ^{[1
]}

Hyun, Sang-Hoon ^{[1
]}

机构：

[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea

[2] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea

[3] Sungkyunkwan Univ, Sungkyunkwan Adv Inst Nanotechnol, Suwon 440746, South Korea

[4] KICET, Seoul 153801, South Korea

来源：

CRYSTENGCOMM | 2012年 / 14卷 / 13期

关键词：

TELLURIUM;

D O I：

10.1039/c2ce25290b

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report the selective and catalyst-free growth of Sb2Te3 and Te nanowires by thermal annealing of sputter-deposited Al-Sb-Te thin films. Sb2Te3 and Te nanowires were grown at low temperature (similar to 250 degrees C) under N-2 and O-2 gas atmospheres, respectively, and they were extruded spontaneously on the surfaces of Al-Sb-Te films with increasing annealing temperature.

引用

页码：4255 / 4258

页数：4

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