Atomic structure of the Sb-stabilized GaAs(100)-(2x4) surface

被引：46
作者：
Esser, N
Shkrebtii, AI
ReschEsser, U
Springer, C
Richter, W
Schmidt, WG
Bechstedt, F
DelSole, R
机构：
[1] UNIV JENA,INST FESTKORPERTHEORIE & THEORET OPT,D-07743 JENA,GERMANY
[2] UNIV ROMA TOR VERGATA,INST NAZL FIS MAT,DIPARTMENTO FIS,I-00133 ROME,ITALY
来源：
PHYSICAL REVIEW LETTERS | 1996年 / 77卷 / 21期
关键词：
D O I：
10.1103/PhysRevLett.77.4402
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The microscopic structure of the Sb stabilized GaAs(100)-(2 x 4) surfaces is investigated combining reflectance anisotropy spectroscopy with first-principles total energy minimization and tight-binding calculations of optical properties. We show that the model accepted so far, containing three Sb dimers in the outermost layer, is not a stable surface geometry. Our results reveal a coexistence of Sb and Ga dimers on the Sb-stabilized (2 x 4) surface.
引用
收藏
页码：4402 / 4405
页数：4
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