Fabrication and characterization of amorphous In Zn-O/SiOx/n-Si heterojunction solar cells

被引：11

作者：

Fang, Hau-Wei ^{[2
]}

Liu, Shiu-Jen ^{[1
]}

Hsieh, Tsung-Eong ^{[2
]}

Juang, Jenh-Yih ^{[3
]}

Hsieh, Jang-Hsing ^{[4
]}

机构：

[1] Natl Taiwan Normal Univ, Dept Math & Sci Precoll, Taipei 244, Taiwan

[2] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[3] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan

[4] Mingchi Univ Technol, Dept Mat Engn, Taipei 243, Taiwan

来源：

SOLAR ENERGY | 2011年 / 85卷 / 11期

关键词：

Amorphous In-Zn-O film; Semiconductor-insulator-semiconductor solar cell; Pulsed laser deposition; Photovoltaic characteristics; OPERATION; BARRIER; DEVICE;

D O I：

10.1016/j.solener.2011.07.016

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Amorphous In-Zn-O (a-IZO) films were deposited on SiOx covered n-type Si substrates by using pulsed laser deposition (PLD) technique to form a-IZO/SiOx/n-Si heterojunction solar cells. The a-IZO films grown at 150 degrees C with various laser power (250-500 mJ/pulse) exhibit low resistivity (2-3 x 10(-3) Omega cm) and high transparency (similar to 80%) in the visible wavelength range. The highest conversion efficiency of the fabricated a-IZO/SiOx/n-Si solar cells is 2.2% under 100 mW/cm(2) illumination (AM 1.5 condition). The open-circuit voltage, short-circuit current density and fill factor of the best device are 0.24 V, 28.4 mA/cm(2) and 33.6%, respectively. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：2589 / 2594

页数：6

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