Room-temperature spin valve effects in La0.67Sr0.33MnO3/Alq3/Co devices

被引：43
作者：
Wang, S.
Shi, Y. J.
Lin, L.
Chen, B. B.
Yue, F. J.
Du, J.
Ding, H. F.
Zhang, F. M.
Wu, D. [1 ]
机构：
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
来源：
SYNTHETIC METALS | 2011年 / 161卷 / 15-16期
关键词：
Organic spintronics; Indirect deposition; Organic spin valve effect; FM/organic interface; ORGANIC SPINTRONICS;
D O I：
10.1016/j.synthmet.2011.06.017
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report room-temperature spin valve effects in Alq(3)-based vertical organic spin valve (OSV) devices with direct interfaces between Alq(3) and the bottom and top ferromagnetic electrodes. In contrast to conventional OSVs, where the top electrode is directly deposited on top of organic layer, we use indirect deposition method. We find this method can significantly suppress the penetration of Co atoms into Alq(3) layer during deposition process, which is commonly found in conventional OSVs. The improved Alq(3)/Co interface is further confirmed by comparing the magnetic moment of depositing Co onto Alq(3) and Si substrates by indirect and direct deposition methods. A penetration length of 12.5 nm in direct deposition Co on top of Alq(3) is estimated. And the demonstration of room-temperature spin valve effects indicates the improvement of spin injection efficiency at sharp Alq(3)/Co interface. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：1738 / 1741
页数：4
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