Optical properties of GaAsSb/GaAs quantum wells

被引：0

作者：

Wang, JB ^{[1
]}

Vaschenko, A ^{[1
]}

Johnson, SR ^{[1
]}

Guo, CZ ^{[1
]}

Menoni, CS ^{[1
]}

Zhang, YH ^{[1
]}

机构：

[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

来源：

2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 | 2003年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：808 / 809

页数：2

共 6 条

[1] Room-temperature pulsed operation of GaAsSb GaAs vertical-cavity surface-emitting lasers [J].

Anan, T ;

Yamada, M ;

Tokutome, K ;

Sugou, S ;

Nishi, K ;

Kamei, A .

ELECTRONICS LETTERS, 1999, 35 (11) :903-904

[2]

CHEN ZB, 2001, CLEO 2001, P209

[3] PICOSECOND RELAXATION MECHANISMS IN HIGHLY EXCITED GAINASP [J].

FOX, AM ;

MANNING, RJ ;

MILLER, A .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (11) :4287-4298

[4] BAND LINEUP IN GAAS1-CHI-SB-CHI-GAAS STRAINED-LAYER MULTIPLE QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].

JI, G ;

AGARWALA, S ;

HUANG, D ;

CHYI, J ;

MORKOC, H .

PHYSICAL REVIEW B, 1988, 38 (15) :10571-10577

[5] REALIZATION AND MODELING OF A PSEUDOMORPHIC (GAAS1-XSBX-INYGA1-YAS)/GAAS BILAYER-QUANTUM WELL [J].

PETER, M ;

WINKLER, K ;

MAIER, M ;

HERRES, N ;

WAGNER, J ;

FEKETE, D ;

BACHEM, KH ;

RICHARDS, D .

APPLIED PHYSICS LETTERS, 1995, 67 (18) :2639-2641

[6]

Yamada M., 1998, Conference Proceedings. LEOS'98. 11th Annual Meeting. IEEE Lasers and Electro-Optics Society 1998 Annual Meeting (Cat. No.98CH36243), P149, DOI 10.1109/LEOS.1998.737775

← 1 →