STM/AFM study of Ge quantum dots grown on Si(111)

被引：0

作者：

Sgarlata, A ^{[1
]}

Rosei, F ^{[1
]}

Fanfoni, M ^{[1
]}

Motta, N ^{[1
]}

Balzarotti, A ^{[1
]}

机构：

[1] Univ Roma Tor Vergata, Dipartimento Fis, I-00133 Rome, Italy

来源：

SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS | 2000年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We study by Scanning Tunneling Microscopy (STM) and Atomic Force Microscopy (AFM) in situ the evolution of Ge islands grown by Physical Vapor Deposition (PVD) on 7x7 Si(111) reconstructed surfaces. On the 5x5 reconstructed Wetting Layer large 3D islands form whose average lateral dimension is about 200 - 500 nm. The statistical distribution of the island shapes has been analyzed, showing that three types of shapes coexist under certain conditions: strained, relaxed and ripened (atoll-like) islands. By Scanning Probe Microscopy (SPM) it was possible to measure the contact angles of the island facets and to observe the depletion of the substrate around the ripened islands. All these features are attributed to the misfit strain. These findings successfully compare with a recent theoretical model.

引用

页码：228 / 231

页数：4

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