Broadband single-electron tunneling transistor

被引：45

作者：

Visscher, EH ^{[1
]}

Lindeman, J ^{[1
]}

Verbrugh, SM ^{[1
]}

Hadley, P ^{[1
]}

Mooij, JE ^{[1
]}

vanderVleuten, W ^{[1
]}

机构：

[1] DELFT UNIV TECHNOL,DELFT INST MICROELECTR & SUBMICRON TECHNOL,2600 GA DELFT,NETHERLANDS

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 14期

关键词：

D O I：

10.1063/1.115622

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A single-electron tunneling transistor has been directly coupled on-chip to a high electron mobility transistor. The high electron mobility transistor (HEMT) is used as an impedance matching circuit with a gain dose to unity. The HEMT transformed the 1.4 M Omega output impedance of the single electron tunneling (SET) transistor by two orders of magnitude down to 5 k Omega, increasing its bandwidth to 50 kHz. This circuit makes it possible to observe the motion of individual electrons at high frequencies. The requirements for the bandwidth in high frequency applications is discussed. (C) 1996 American Institute of Physics.

引用

页码：2014 / 2016

页数：3

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