An X-ray photoelectron spectroscopy study of ultra-thin oxynitride films

被引：16

作者：

Ladas, S. ^{[1
]}

Sygellou, L. ^{[1
]}

Kennou, S. ^{[1
]}

Wolf, M. ^{[2
]}

Roeder, G. ^{[2
]}

Nutsch, A. ^{[2
]}

Rambach, M. ^{[3
]}

Lerch, W. ^{[3
]}

机构：

[1] Univ Patras, Dept Chem Engn, Surface Sci Lab, Rion 26504, Achaia, Greece

[2] Fraunhofer Inst Integrierte Syst & Bauelementetec, D-91058 Erlangen, Germany

[3] Centrotherm Thermal Solut, D-89143 Blaubeuren, Germany

来源：

THIN SOLID FILMS | 2011年 / 520卷 / 02期

关键词：

Silicon oxynitrides; Thin films; XPS; Thickness measurement; Plasma nitridation; BIAS TEMPERATURE INSTABILITY; NITROGEN; SI; OXIDATION;

D O I：

10.1016/j.tsf.2011.04.161

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Oxynitrides prepared by nitridation of 2 to 5 nm SiO2 films on silicon, were studied by X-ray photoelectron spectroscopy at two analyser exit angles. An iterative procedure was applied to obtain simultaneously the average nitrogen content and the thickness of the nitrided layer, mutually dependent via the electron transport properties of the layer matrix. Inelastic mean free paths and elastic corrections thereof were determined in accordance with ISO18118:2004(E), whereas a set of empirical relative sensitivity factors was used. The results reveal a significant increase of the 2 nm film thickness upon nitrogen incorporation of the order of 50 at.%, whereas the 5 nm films retain their thickness upon comparable extent of nitridation. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：871 / 875

页数：5

共 15 条

[1] Briggs D., 2003, SURFACE ANAL AUGER X, P444
[2] Direct observation of interstitial molecular N2 in Si oxynitrides -: art. no. 022901
Chung, YS
Lee, JC
Shin, HJ
[J]. APPLIED PHYSICS LETTERS, 2005, 86 (02) : 022901 - 1
[3] Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics:: Understanding the processing, structure, and physical and electrical limits
Green, ML
Gusev, EP
Degraeve, R
Garfunkel, EL
[J]. JOURNAL OF APPLIED PHYSICS, 2001, 90 (05) : 2057 - 2121
[4] OXIDATION OF SILICON (OXY)NITRIDE AND NITRIDATION OF SILICON DIOXIDE - MANIFESTATIONS OF THE SAME CHEMICAL-REACTION SYSTEM
HABRAKEN, FHPM
KUIPER, AET
[J]. THIN SOLID FILMS, 1990, 193 (1-2) : 665 - 674
[5] Jablonski A, 2002, SURF SCI REP, V47, P35, DOI 10.1016/S0167-5729(02)00031-6
[6] The impact of nitrogen engineering in silicon oxynitride gate dielectric on negative-bias temperature instability of p-MOSFETs:: A study by ultrafast on-the-fly IDLIN technique
Maheta, Vrajesh D.
Olsen, Christopher
Ahmed, Khaled
Mahapatra, Souvik
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (07) : 1630 - 1638
[7] Influence of nitrogen on negative bias temperature instability in ultrathin SiON
Mitani, Yuichiro
Satake, Hideki
Toriumi, Akira
[J]. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2008, 8 (01) : 6 - 13
[8] Effects of post annealing on removal of defect states in silicon oxynitride films grown by oxidation of silicon substrates nitrided in inductively coupled nitrogen plasma
Perera, R
Ikeda, A
Hattori, R
Kuroki, Y
[J]. THIN SOLID FILMS, 2003, 423 (02) : 212 - 217
[9] Seah M.P., 2003, Surface Analysis by Auger and X-ray Photoelectron Spectroscopy, P345
[10] Ultrathin SiO2 on Si -: IV.: Intensity measurement in XPS and deduced thickness linearity
Seah, MP
Spencer, SJ
[J]. SURFACE AND INTERFACE ANALYSIS, 2003, 35 (06) : 515 - 524

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