β-FeSi2 continuous films prepared on corning 7059 glass by RF-magnetron sputtering

被引:5
作者
Okuda, Y
Momose, N
Takahashi, M
Hashimoto, Y
Ito, K
机构
[1] Shinshu Univ, Fac Engn, Dept Elect & Elect Engn, Nagano 3808553, Japan
[2] Nagano Natl Coll Technol, Dept Elect & Elect Engn, Nagano 3818550, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 9A期
关键词
iron disilicide; continuous film; corning; 7059; glass; vacuum annealing; X-ray diffraction; focused-ion beam; secondary-ion microscope; scanning probe microscope; Hall measurement; X-ray photoelectron spectroscopy;
D O I
10.1143/JJAP.44.6505
中图分类号
O59 [应用物理学];
学科分类号
摘要
More than 1-mu m-thick single-phase beta-FeSi2 continuous films on Corning 7059 glass and quartz have been obtained by an easy method. We controlled the Si/Fe composition ratio of Fe-Si precursor using a Si target with sectorial Fe plates placed on it. Both surface flatness of the film and beta-FeSi2/substrate interface were satisfactory, and cracks were not observed by secondary ion microscopy. Suitable electric properties of beta-FeSi2 for solar cell absorption layers (p-type, 5 Omega center dot cm, 40 cm/(V center dot s), and 1 x 10(17) cm(-3)) were obtained from a Si/Fe = 1.7 Fe-rich precursor.
引用
收藏
页码:6505 / 6507
页数:3
相关论文
共 23 条
  • [1] Growth of epitaxial β-FeSi2 thin film on Si(001) by metal-organic chemical vapor deposition
    Akiyama, K
    Kimura, T
    Suemasu, T
    Hasegawa, F
    Maeda, Y
    Funakubo, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (4B): : L551 - L553
  • [2] Growth of β-FeSi2 thin film on Si (111) by metal-organic chemical vapor deposition
    Akiyama, K
    Ohya, S
    Takano, H
    Kieda, N
    Funakubo, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (5A): : L460 - L462
  • [3] A CLARIFICATION OF THE INDEX OF REFRACTION OF BETA-IRON DISILICIDE
    BOST, MC
    MAHAN, JE
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) : 2034 - 2037
  • [4] OPTICAL-PROPERTIES OF SEMICONDUCTING IRON DISILICIDE THIN-FILMS
    BOST, MC
    MAHAN, JE
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) : 2696 - 2703
  • [5] ELECTRONIC-PROPERTIES OF SEMICONDUCTING FESI2 FILMS
    DIMITRIADIS, CA
    WERNER, JH
    LOGOTHETIDIS, S
    STUTZMANN, M
    WEBER, J
    NESPER, R
    [J]. JOURNAL OF APPLIED PHYSICS, 1990, 68 (04) : 1726 - 1734
  • [6] POLYCRYSTALLINE BETA-FESI2 THIN-FILMS ON NON-SILICON SUBSTRATES
    HERZ, K
    POWALLA, M
    EICKE, A
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1994, 145 (02): : 415 - 424
  • [7] Direct growth of [100]-oriented high-quality β-FeSi2 films on Si(001) substrates by molecular beam epitaxy
    Hiroi, N
    Suemasu, T
    Takakura, K
    Seki, N
    Hasegawa, F
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (10A): : L1008 - L1011
  • [8] Synthesis and properties of semiconducting iron disilicide β-FeSi2
    Kakemoto, H
    Makita, Y
    Sakuragi, S
    Tsukamoto, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (9A): : 5192 - 5199
  • [9] PHOTOELECTRIC STUDY OF BETA-FESI2 ON SILICON - OPTICAL-THRESHOLD AS A FUNCTION OF TEMPERATURE
    LEFKI, K
    MURET, P
    [J]. JOURNAL OF APPLIED PHYSICS, 1993, 74 (02) : 1138 - 1142
  • [10] Toward new cylindrical electrostatic micromotors using tubular combination of arrayed direct-drive actuators
    Minotti, P
    Bourbon, G
    Langlet, P
    Masuzawa, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (5B): : L622 - L625