10-Gb/s Ge/SiGe Multiple Quantum-Well Waveguide Photodetector

被引：24

作者：

Chaisakul, Papichaya ^{[1
]}

Marris-Morini, Delphine ^{[1
]}

Isella, Giovanni ^{[2
]}

Chrastina, Daniel ^{[2
]}

Rouifed, Mohamed-Said ^{[1
]}

Le Roux, Xavier ^{[1
]}

Edmond, Samson ^{[1
]}

Cassan, Eric ^{[1
]}

Coudevylle, Jean-Rene ^{[1
]}

Vivien, Laurent ^{[1
]}

机构：

[1] Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France

[2] Politecn Milan, Dipartimento Fis, Lab Epitaxial Nanostruct Silicon & Spintron, L NESS, I-22100 Polo Di Como, Como, Italy

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2011年 / 23卷 / 20期

关键词：

Ge/SiGe; integrated optoelectronics; multiple quantum wells; silicon photonics; SILICON; ELECTROABSORPTION; HETEROSTRUCTURES; PHOTONICS; MODULATOR;

D O I：

10.1109/LPT.2011.2162724

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report on high speed operation of a Ge/SiGe multiple quantum-well waveguide photodetector. At -3 V, 10 Gb/s operation is demonstrated at wavelengths of 1405 and 1420 nm with a responsivity as high as 0.8 A/W. The device, 3 mu m wide and 80 mu m long, exhibits a dark current of 474 nA at a reverse bias of -1 V. These results pave the way for the use of Ge/SiGe multiple quantum-well structures as efficient active waveguide devices in silicon compatible integrated circuits.

引用

页码：1430 / 1432

页数：3

共 19 条

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