The effect of the electric field on the photoionization cross-section

被引:1
作者
Sali, A
Fliyou, M
Loumrhari, H
机构
[1] Fac Sci, Dept Phys, Meknes, Morocco
[2] ENS, Dept Phys, Bensouda, Fes, Morocco
来源
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS | 1998年 / 20卷 / 06期
关键词
D O I
10.1007/BF03185483
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The effect of the electric field on the donor impurity is investigated in the case of a spherical conduction band with the use of a variational procedure. An analytical expression for the photoionization cross-section as a function of photon energy within the effective mass approximation of an impurity atom in an applied field was obtained. The effect of central cell correction by means of a semiempirical short-range potential is taken into account. It has been found that the binding energy and the spectral dependence of the cross-section are very sensitive to the electric field, the shape of the impurity potential and their combined effect.
引用
收藏
页码:823 / 831
页数:9
相关论文
共 19 条
[1]   SELF-CONSISTENT METHOD FOR POINT-DEFECTS IN SEMICONDUCTORS - APPLICATION TO VACANCY IN SILICON [J].
BERNHOLC, J ;
LIPARI, NO ;
PANTELIDES, ST .
PHYSICAL REVIEW LETTERS, 1978, 41 (13) :895-899
[2]   EFFECT OF CHEMICAL-SHIFT ON POLARIZABILITIES OF DONORS IN SEMICONDUCTORS [J].
CAHAY, M ;
KARTHEUSER, E .
SOLID STATE COMMUNICATIONS, 1983, 48 (09) :781-783
[3]   PHOTO-IONIZATION OF IMPURITY ATOMS IN SEMICONDUCTORS IN THE PRESENCE OF AN APPLIED ELECTRIC-FIELD [J].
COON, DD ;
KARUNASIRI, RPG .
SOLID-STATE ELECTRONICS, 1983, 26 (12) :1151-1155
[4]  
Hasse HR, 1930, P CAMB PHILOS SOC, V26, P542
[5]   IMPURITY PHOTOIONIZATION IN SEMICONDUCTORS [J].
ILAIWI, KF ;
TOMAK, M .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1990, 51 (04) :361-365
[6]   EFFECT OF ANISOTROPY ON THE ENERGY AND POLARIZABILITY OF DONORS IN ELEMENTAL SEMICONDUCTORS [J].
KARTHEUSER, E ;
SCHMIT, J ;
SZWACKA, T .
SOLID STATE COMMUNICATIONS, 1985, 53 (06) :551-553
[7]   PHOTOIONIZATION OF SEMICONDUCTOR IMPURITIES IN THE PRESENCE OF A STATIC ELECTRIC-FIELD [J].
LAMOUCHE, G ;
LEPINE, Y .
PHYSICAL REVIEW B, 1994, 49 (19) :13452-13459
[8]   CENTRAL CELL EFFECTS ON ACCEPTOR SPECTRA IN SI AND GE [J].
LIPARI, NO ;
BALDERESCHI, A ;
THEWALT, MLW .
SOLID STATE COMMUNICATIONS, 1980, 33 (03) :277-279
[9]   ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS (REPRINTED FROM SOLID-STATE COMMUN, VOL 3, PG 299-302, 1965) [J].
LUCOVSKY, G .
SOLID STATE COMMUNICATIONS, 1993, 88 (11-12) :879-882
[10]   PHOTO-IONIZATION CROSS-SECTION OF INDIUM ACCEPTORS IN SILICON [J].
MESSENGER, RA ;
BLAKEMORE, JS .
SOLID STATE COMMUNICATIONS, 1971, 9 (05) :319-+