Observation of cavity polaritons in InGaN quantum well microcavities

被引：6
作者：
Tawara, T [1 ]
Gotoh, H [1 ]
Akasaka, T [1 ]
Kobayashi, N [1 ]
Makimoto, T [1 ]
Saitoh, T [1 ]
机构：
[1] NTT Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
来源：
FOURTH INTERNATIONAL CONFERENCE ON PHYSICS OF LIGHT-MATTER COUPLING IN NANOSTRUCTURES (PLMCN4) | 2005年 / 2卷 / 02期
关键词：
D O I：
10.1002/pssc.200460308
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We observe cavity polaritons in InGaN quantum well (QW) microcavities at room temperature. The crack-free microcavities with a high quality factor (Q) of 400 are fabricated by the wafer bonding of InGaN QW layers and dielectric distributed Bragg reflectors (DBRs). The anti-crossing behaviour of cavity polaritons is confirmed with a vacuum-field Rabi splitting in the reflection measurements. We also observe the splitting in photoluminescence (PL) spectra. The oscillator strength of the InGaN QW excitons is found to be one order of magnitude larger than that of GaAs QW excitons. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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页码：809 / 812
页数：4
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