Understanding phase separation in ZnCdO by a combination of structural and optical analysis

被引:56
作者
Venkatachalapathy, Vishnukanthan [1 ]
Galeckas, Augustinas [1 ]
Trunk, Mareike [1 ]
Zhang, Tianchong [1 ]
Azarov, Alexander [1 ]
Kuznetsov, Andrej Yu [1 ]
机构
[1] Univ Oslo, Dept Phys, Ctr Mat Sci & Nanotechnol, N-0316 Oslo, Norway
关键词
ZNO FILMS; ZN1-XCDXO FILMS; BAND-GAPS; A-PLANE; WURTZITE; GROWTH; EQUILIBRIA; PRESSURE; SYSTEM; LAYERS;
D O I
10.1103/PhysRevB.83.125315
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A phenomenon of wurtzite (w), zincblende (zb), and rock-salt (rs) phase separation was investigated in ZnCdO films having Cd contents in the range of 0%-60% settling a discussion on the phase stability issues in ZnCdO. First, low-Cd-content (<= 17%) ZnCdO was realized preferentially in a w matrix determining optimal Zn-lean conditions by tuning the precursor decomposition rates during synthesis. However, more detailed analysis of x-ray diffraction and photoluminescence (PL) data revealed that the w single-phase stability range is likely to be as narrow as 0%-2% Cd, while samples containing 7%-17% of Cd exhibit a mixture of w and zb phases. Second, high-Cd-content (32%-60%) ZnCdO samples were realized, supplying more of the Cd precursor utilizing Zn-lean growth conditions, however, resulting in a mixture of w, zb, and rs phases. Characteristic PL signatures at 2.54 and 2.31 eV were attributed to zb-ZnCdO and rs-CdO, respectively, while the band gap variation in w-Zn1-xCdxO is given by (3.36-0.063x) as determined at 10 K. The phase separation is interpreted in terms of corresponding changes in the charge distribution and reduced stacking fault energy.
引用
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页数:11
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