On the origin of carrier localization in Ga1-xInxNyAs1-y/GaAs quantum wells

被引：129
作者：
Pinault, MA [1 ]
Tournié, E [1 ]
机构：
[1] CNRS, Ctr Rech Heteroepitaxie & Applicat, F-06560 Valbonne, France
来源：
APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 11期
关键词：
D O I：
10.1063/1.1354153
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated by temperature-dependent photoluminescence (PL) spectroscopy as-grown GaInNAs, InGaAs, and GaAsN quantum wells (QWs) embedded in a GaAs matrix. The evolution of the PL peak position and of the PL linewidth shows evidence of a strong carrier localization for the GaInNAs QWs only. The high delocalization temperature, in the 150 K range, indicates the presence of a high density of possibly deep-localizing potential wells. In addition, a higher density of nonradiative recombination centers appears to result in stronger carrier localization. Transmission electron microscopy reveals well defined, flat interfaces, in these comparatively high N-content (y(N)similar to0.04-0.05) QWs. Our results thus demonstrate that the origin of localization in GaInNAs QWs is the concomitant presence of both In and N, which may result in strain and/or composition fluctuations. (C) 2001 American Institute of Physics.
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页码：1562 / 1564
页数：3
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