Evaluation of the growth condition of chemical vapour deposition diamond under fluorine addition

被引：2

作者：

Wan, YZ ^{[1
]}

Zhang, DW ^{[1
]}

Liu, ZJ ^{[1
]}

Zhang, JY ^{[1
]}

Wang, JT ^{[1
]}

机构：

[1] Fudan Univ, Dept Elect Engn, CVD Lab, Shanghai 200433, Peoples R China

来源：

MATERIALS CHEMISTRY AND PHYSICS | 1998年 / 56卷 / 03期

基金：

中国国家自然科学基金;

关键词：

chemical vapour deposition; diamond; phase diagrams; fluorine;

D O I：

10.1016/S0254-0584(98)00172-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Effects of fluorine addition on the growth conditions of chemical vapour deposition (CVD) diamond are discussed in the Light of thermodynamics. Phase diagrams in the C-H-F system for low-pressure diamond growth are calculated in the usual conditions: 0.1-6.67 kPa, 900-1100 K. The effects of substrate temperature and fluorine addition on the diamond growth region are explored. From these phase diagrams, we find that the diamond growth region is small and near the CH4-HF line at low temperature; it gradually moves to the H-HF line with increasing temperature. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：275 / 279

页数：5

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