MODELING MORPHOLOGY CHANGE FOR Si SURFACE AT Ar+ ION SPUTTERING

被引：0
|
作者：
Kharchenko, D. O. [1 ]
Kharchenko, V. O. [1 ]
机构：
[1] Natl Acad Sci Ukraine, Inst Appl Phys, Sumy, Ukraine
来源：
PROBLEMS OF ATOMIC SCIENCE AND TECHNOLOGY | 2011年 / 02期
关键词：
ROUGHENING INSTABILITY; BOMBARDED SI(001); DIFFUSION; EVOLUTION; PATTERN;
D O I：
暂无
中图分类号：
O57 [原子核物理学、高能物理学];
学科分类号：
070202 ;
摘要：
We study morphology change of silicon surface at sputtering by argon ions. Using both Monte-Carlo and continual approach a stability diagram for surface patterns having nano-scale range is calculated. We have obtained scaling characteristics for wave-length of patterns when they change their orientation. Scaling exponents characterizing growth processes and both lateral and longitudinal roughness are obtained for domains of the stability diagram related to different kind of patterns.
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页码：16 / 21
页数：6
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