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Exploring the relationship between the "ON-OFF" mechanism of fluorescent probes and intramolecular charge transfer properties
被引:5
|作者:
Zhan, Hongbin
[1
]
Zhang, Hengwei
[1
]
Wang, Yi
[1
]
Tao, Yaping
[3
]
Tian, Jing
[1
]
Fei, Xu
[2
]
机构:
[1] Dalian Polytech Univ, Sch Biol Engn, Dalian 116034, Peoples R China
[2] Dalian Polytech Univ, Network Informat Ctr, Dalian 116034, Peoples R China
[3] Luoyang Normal Univ, Coll Phys & Elect Informat, Luoyang 471022, Peoples R China
关键词:
Charge transfer;
Density functional calculations;
Fluorescent mechanism;
Fluorescent probes;
Inter-system crossing;
HYPOCHLOROUS ACID;
RATIOMETRIC DETECTION;
PROTON-TRANSFER;
FREE-RADICALS;
LIVING CELLS;
WATER;
MYELOPEROXIDASE;
MITOCHONDRIA;
ANTIOXIDANTS;
CONTINUUM;
D O I:
10.1016/j.saa.2021.120339
中图分类号:
O433 [光谱学];
学科分类号:
0703 ;
070302 ;
摘要:
In this study, the excited state charge distribution characteristics and fluorescence mechanism of HClO detection probes HN-ClO (weak fluorescence) and HN-ClO-F (strong fluorescence) probes were investigated based on density functional theory (DFT) and time-dependent density functional theory (TDDFT). The results of electrostatic potential (ESP) map and hole-electron analysis show that the HNClO and HN-ClO-F probes have obvious charge separation characteristics in the excited state. The excited state energy decomposition and Merz-Kollman charge analysis demonstrate the existence of distinct planar intramolecular charge transfer (PICT) features in HN-ClO and HN-ClO-F. Due to the strong charge coupling caused by the planar structure, the fluorescence of HN-ClO-F could occur. Furthermore, the weak fluorescence of HN-ClO is caused by inter-system crossing (ISC) between S-1 and T-1 state. Our result proves that the ICT process could exist in HN-ClO-F, but the PICT process does not cause fluorescence quenching, which have provided an excellent supplement to the mechanism of fluorescent probes. The conclusion is consistent with the fluorescence phenomenon observed in the experiment. (C) 2021 Elsevier B.V. All rights reserved.
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页数:9
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