SiC based gas sensors and their applications

被引:10
作者
Savage, S
Svenningstorp, H
Unéus, L
Kroutchinine, A
Tobias, P
Ekedahl, LG
Lundström, I
Harris, C
Spetz, AL
机构
[1] ACREO AB, SE-16440 Kista, Sweden
[2] Linkoping Univ, S SENCE, SE-58183 Linkoping, Sweden
[3] Linkoping Univ, Div Appl Phys, SE-58183 Linkoping, Sweden
来源
SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000 | 2001年 / 353-356卷
关键词
car exhausts; electronic nose; flue gases; gas sensors; MOSFET; Schottky diodes;
D O I
10.4028/www.scientific.net/MSF.353-356.747
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The development and field-testing of hardy high-temperature sensors based on silicon carbide devices has to date shown promising results in several application areas. As the need to take care of the environment becomes more urgent, these small and relatively cheap sensors could be used to increase the monitoring of gases, or to replace or complement larger and more expensive sensor technologies used today. In this paper the development of Silicon Carbide MOSFET transistor sensors and Schottky diode sensors is described. The devices are tested in industrial applications such as monitoring of car exhausts and flue gases.
引用
收藏
页码:747 / 752
页数:6
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