Spectral and current-voltage characteristics of Si-Si1-xGex heterostructures grown by liquid phase epitaxy

被引：1
|
作者：
Saidov, AS [1 ]
Kutlimratov, A [1 ]
Sapaev, B [1 ]
Davlatov, UT [1 ]
机构：
[1] Uzbek Acad Sci, Solar Phys Res & Prod Corp, Inst Engn Phys, Tashkent 700135, Uzbekistan
来源：
TECHNICAL PHYSICS LETTERS | 2001年 / 27卷 / 04期
关键词：
D O I：
10.1134/1.1370213
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The spectral and current-voltage (I-V) characteristics of Si-Si1 - xGex heterostructures grown by liquid phase epitaxy on silicon substrates were studied. The dependence of the longwave photosensitivity boundary of these structures on the variband solid solution composition was determined. It is shown that these variband solid solutions can serve as transition buffer layers between silicon substrates and a structure based on a different semiconductor. These structures can be employed in elements converting a part of the IR solar radiation in cascade solar cells and in photodetectors for the optical fiber communication lines transmitting signals with the wavelengths lambda = 1.33 and 1.5 mum. (C) 2001 MAIK "Nauka/Interperiodica".
引用
收藏
页码：319 / 322
页数：4
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