Temperature dependence of exciton linewidths in InSb quantum wells

被引：66

作者：

Dai, N ^{[1
]}

Brown, F

Doezema, RE

Chung, SJ

Santos, MB

机构：

[1] Univ Oklahoma, Dept Phys & Astron, Norman, OK 73019 USA

[2] Univ Oklahoma, Ctr Semicond Phys Nanostruct, Norman, OK 73019 USA

来源：

PHYSICAL REVIEW B | 2001年 / 63卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.63.115321

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We studied the linewidths of excitons in InSb/Al0.09In0.91Sb quantum wells between 4.2 and 300 K using Fourier-transform infrared spectroscopy. Even though the exciton binding energy is only about 1 meV, the absorption is excitonic up to room temperature, due to very weak LO-phonon-electron coupling. The electron-phonon coupling constants and exciton binding energies were obtained through fitting the experimental data. We found that acoustic phonon scattering must be taken into account in fitting the experimental exciton linewidths.

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页数：5

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