Composition determination of β-(AlxGa1-x)2O3 layers coherently grown on (010) β-Ga2O3 substrates by high-resolution X-ray diffraction

被引：95

作者：

Oshima, Yuichi ^{[1
]}

Ahmadi, Elaheh ^{[1
]}

Badescu, Stefan C. ^{[2
]}

Wu, Feng ^{[1
]}

Speck, James S. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Santa Barbara, CA 93106 USA

[2] Sensors Directorate, Wright Patterson Air Force Base, Dayton, OH 45433 USA

来源：

APPLIED PHYSICS EXPRESS | 2016年 / 9卷 / 06期

基金：

美国国家科学基金会;

关键词：

D O I：

10.7567/APEX.9.061102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate X-ray-diffraction-based composition estimation of beta-(AlxGa1-x)(2)O-3 coherently grown on (010) beta-Ga2O3. The relation between the strain along the [010] direction and the Al composition of the beta-(AlxGa1-x)(2)O-3 layer was formulated using the stress-strain relationship in the monoclinic system. This formulation allows us to estimate the Al composition using the out-of-plane lattice spacing determined by conventional X-ray omega-2 theta. measurements. This method was applied to molecular-beam-epitaxy-grown coherent beta-(AlxGa1-x)(2)O-3/Ga2O3 heterostructures, and the Al composition in beta-(AlxGa1-x)(2)O-3 agrees closely with the composition determined directly by atom probe tomography. (C) 2016 The Japan Society of Applied Physics

引用

页数：3

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