Nanoscale depth-resolved electronic properties of SiO2/SiOx/SiO2 for device-tolerant electronics

被引：9

作者：

Katz, E. J. ^{[1
]}

Zhang, Z. ^{[1
]}

Hughes, H. L. ^{[2
]}

Chung, K. -B. ^{[3
]}

Lucovsky, G. ^{[3
]}

Brillson, L. J. ^{[1
,4
]}

机构：

[1] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

[2] USN, Res Lab, Washington, DC 20375 USA

[3] N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA

[4] Ohio State Univ, Dept Phys, Columbus, OH 43210 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2011年 / 29卷 / 01期

基金：

美国国家科学基金会;

关键词：

THERMALLY-STIMULATED-CURRENT; AMORPHOUS-SILICON; HOLE; NANOCLUSTERS; INTERFACE; OXIDES; LAYERS; SIO2;

D O I：

10.1116/1.3543712

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have used nanoscale depth-resolved cathodoluminescence spectroscopy (DRCLS) of device-tolerant oxides to measure the energy levels and spatial distribution of defects within nanocrystalline grains in an alpha-SiO2 matrix that counteract hole trapping and reduce CMOS transistor degradation due to ionizing radiation. DRCLS of 58 nm SiO2/SiOx/SiO2 oxide structures distinguishes spatially and electronically between the intrinsic SiO2 and SiOx-related defects. Annealing the alpha-SiO2 oxide produces nanocrystalline Si grain formation that increases the concentration of defects 0.3 eV above the Si valence band that can trap electrons and block radiolytic proton transport. This study validates a carrier trapping mechanism for phase-separated device-tolerant SiOx oxide layers. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3543712]

引用

页数：7

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