Improved radiation resistant properties of electron irradiated c-Si solar cells

被引：3
作者：
Ali, Khuram [1 ,2 ]
Khan, Sohail A. [1 ]
MatJafri, M. Z. [1 ]
机构：
[1] Univ Sains Malaysia, Sch Phys, Nanooptoelect Res & Technol Lab, George Town 11800, Malaysia
[2] Univ Agr Faisalabad, Dept Phys, Faisalabad 38040, Pakistan
来源：
RADIATION PHYSICS AND CHEMISTRY | 2016年 / 125卷
关键词：
Solar cell; Irradiation; Defects; Annealing; Capacitance-conductance; INDUCED DEFECTS; CAPACITANCE; CONDUCTANCE; PERFORMANCE;
D O I：
10.1016/j.radphyschem.2016.04.015
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
This work investigates the radiation tolerance of c-Si solar cells under electron energy of 9 MeV with fluence of 5.09 x 1016 cm(-2) The solar cells were fabricated and characterized before and after electron irradiation through current-voltage (I-V), capacitance-voltage (C-V), and frequency dependent conductance (G(p)) measurements. The results revealed that all the output parameters such as short circuit current (I-sc) open circuit voltage (V-oc), series resistance (R-s), and efficiency (eta) were degraded after electron irradiation. Capacitance-Voltage measurements show that there is a slight decrease in the base carrier concentration (N-D), while a small increase in depletion layer width (WD) was due to an increase in the base carrier concentration. Enhancements in the density of interface states (N-ss), and trap time constant (tau) have been observed after electron irradiation. The results has revealed that back surface field (BSF) solar cell with front surface passivation (FSP) presented lowest efficiency degradation ratio of 11.3% as compared to 15.3% of the solar cell without FSP. The subsequent annealing of irradiated Si solar cell devices revealed that the Si solar cell with FSP demonstrated high efficiency recovery ratio of 94% as compared to non-FSP solar cell. (C) 2016 Elsevier Ltd. All rights reserved.
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页码：220 / 226
页数：7
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