Improved radiation resistant properties of electron irradiated c-Si solar cells

被引：4

作者：

Ali, Khuram ^{[1
,2
]}

Khan, Sohail A. ^{[1
]}

MatJafri, M. Z. ^{[1
]}

机构：

[1] Univ Sains Malaysia, Sch Phys, Nanooptoelect Res & Technol Lab, George Town 11800, Malaysia

[2] Univ Agr Faisalabad, Dept Phys, Faisalabad 38040, Pakistan

来源：

RADIATION PHYSICS AND CHEMISTRY | 2016年 / 125卷

关键词：

Solar cell; Irradiation; Defects; Annealing; Capacitance-conductance; INDUCED DEFECTS; CAPACITANCE; CONDUCTANCE; PERFORMANCE;

D O I：

10.1016/j.radphyschem.2016.04.015

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This work investigates the radiation tolerance of c-Si solar cells under electron energy of 9 MeV with fluence of 5.09 x 1016 cm(-2) The solar cells were fabricated and characterized before and after electron irradiation through current-voltage (I-V), capacitance-voltage (C-V), and frequency dependent conductance (G(p)) measurements. The results revealed that all the output parameters such as short circuit current (I-sc) open circuit voltage (V-oc), series resistance (R-s), and efficiency (eta) were degraded after electron irradiation. Capacitance-Voltage measurements show that there is a slight decrease in the base carrier concentration (N-D), while a small increase in depletion layer width (WD) was due to an increase in the base carrier concentration. Enhancements in the density of interface states (N-ss), and trap time constant (tau) have been observed after electron irradiation. The results has revealed that back surface field (BSF) solar cell with front surface passivation (FSP) presented lowest efficiency degradation ratio of 11.3% as compared to 15.3% of the solar cell without FSP. The subsequent annealing of irradiated Si solar cell devices revealed that the Si solar cell with FSP demonstrated high efficiency recovery ratio of 94% as compared to non-FSP solar cell. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：220 / 226

页数：7

共 37 条

[1] Enhancement of silicon solar cell efficiency by using back surface field in comparison of different antireflective coatings [J].

Ali, Khuram ;

Khan, Sohail A. ;

Jafri, M. Z. Mat .

SOLAR ENERGY, 2014, 101 :1-7

[2]

Ali K, 2013, INT J ELECTROCHEM SC, V8, P7831

[3]

Ashry M., 2012, SOLID STATE ELECT, V1, P41

[4] Capacitance and conductance studies on silicon solar cells subjected to 8 MeV electron irradiations [J].

Bhat, P. Sathyanarayana ;

Rao, Asha ;

Sanjeev, Ganesh ;

Usha, G. ;

Priya, G. Krishna ;

Sankaran, M. ;

Puthanveettil, Suresh E. .

RADIATION PHYSICS AND CHEMISTRY, 2015, 111 :28-35

[5] A study on the variation of c-Si solar cell parameters under 8 MeV electron irradiation [J].

Bhat, P. Sathyanarayana ;

Rao, Asha ;

Krishnan, Sheeja ;

Sanjeev, Ganesh ;

Puthanveettil, Suresh E. .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2014, 120 :191-196

[6] Radiation-induced defects in solar cell materials [J].

Bourgoin, JC ;

de Angelis, N .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2001, 66 (1-4) :467-477

[7] The conductance and capacitance-frequency characteristics of Au/pyronine-B/ptype Si/Al contacts [J].

Cakar, M. ;

Yildirim, N. ;

Dogan, H. ;

Turut, A. .

APPLIED SURFACE SCIENCE, 2007, 253 (07) :3464-3468

[8] Capacitance technique for the determination of interface state density of metal-semiconductor contact [J].

Chattopadhyay, P .

SOLID-STATE ELECTRONICS, 1996, 39 (10) :1491-1493

[9]

Corbett J. W., 1966, SOLID STATE PHYS S7

[10] Recombination and trapping in multicrystalline silicon [J].

Cuevas, A ;

Stocks, M ;

Macdonald, D ;

Kerr, M ;

Samundsett, C .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (10) :2026-2034

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