Analytical solution for moisture-induced interface delamination in electronic packaging

被引：18

作者：

Fan, XJ ^{[1
]}

Zhang, GQ ^{[1
]}

van Driel, W ^{[1
]}

Ernst, LJ ^{[1
]}

机构：

[1] Philips Res USA, Briarcliff Manor, NY 10510 USA

来源：

53RD ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE, 2003 PROCEEDINGS | 2003年

关键词：

D O I：

10.1109/ECTC.2003.1216365

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper a vapor pressure model based a micromechanics approach is introduced first, with which the moisture absorption and porosity of material, and temperature can be connected. Then the neo-Hookean model is used to describe the finite-deformation of rubber-like plastic material at higher temperature. It has been observed that the vapor pressure has almost negligible impact on the material behaviors in bulk. However, with the implementation of interface properties into the model study, it shows that the critical stress that results in the unstable void growth and delamination at interface is significantly reduced and comparable to the magnitude of vapor pressure. A framework of the description of void-growth at interface is postulated.

引用

页码：733 / 738

页数：6

共 10 条

[1]

BAKHVALOV BS, 1989, HOMOGENIZAITON AVERA

[2]

CHEW HB, 2001, APACK C ADV PACK SIN

[3] VOID BEHAVIOR DUE TO INTERNAL-PRESSURE INDUCED BY TEMPERATURE RISE [J].