Controllable lateral growth and electrical properties of nonpolar ZnO nanowires

被引：0

作者：

Xu, Congkang ^{[1
,2
]}

Li, Yongkuan ^{[1
]}

Wang, Jiangyong ^{[1
]}

机构：

[1] Shantou Univ, Coll Sci, Dept Phys, Res Ctr Adv Opt & Photoelect, Shantou 515063, Guangdong, Peoples R China

[2] Key Lab Intelligent Mfg Technol MOE, Shantou 515063, Guangdong, Peoples R China

来源：

AIP ADVANCES | 2020年 / 10卷 / 03期

关键词：

OPTICAL-PROPERTIES; NANORODS; NANOBELTS;

D O I：

10.1063/1.5130653

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The iodide interplay with polar Zn2+ and O2- induced nonpolar [10 (1) over bar 10] ZnO nanowires is fabricated via a simple vapor phase transport at a temperature of as low as 250 degrees C that is compatible with the nanodevice processing technique. As-fabricated nanowires exhibit single crystalline hexagonal wurtzite structures and grow along the [10 (1) over bar 10] direction instead of the conventional polar [0001] direction. The growth evolution can be explained by the synergy of the vapor-liquid-solid process and iodide direction-modulation. The electrical measurements demonstrate that the mobility of the PbI2-induced [10 (1) over bar 10] nanowires is significantly improved in comparison with that of the BiI3-modulated [11 (2) over bar0] ones. These unique nonpolar nanowires are promising for improved high efficiency nanodevices.

引用

页数：5

共 26 条

[1] Growth of non-polar ZnO thin films with different working pressures by plasma enhanced chemical vapor deposition [J].

Chao, Chung-Hua ;

Wei, Da-Hua .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (11)

[2] Nonpolar light emitting diode made by m-plane n-ZnO/p-GaN heterostructure [J].

Chen, C. W. ;

Hung, S. C. ;

Lee, C. H. ;

Tun, C. J. ;

Kuo, C. H. ;

Yang, M. D. ;

Yeh, C. W. ;

Wu, C. H. ;

Chi, G. C. .

OPTICAL MATERIALS EXPRESS, 2011, 1 (08) :1555-1560

[3] Progress in the growth and characterization of nonpolar ZnO films [J].

Chen, Jin-Ju ;

Deng, Xue-Ran ;

Deng, Hong .

JOURNAL OF MATERIALS SCIENCE, 2013, 48 (02) :532-542

[4] Strain dependent anisotropy in photoluminescence of heteroepitaxial nonpolar a-plane ZnO layers [J].

Chen, Jingwen ;

Zhang, Jun ;

Dai, Jiangnan ;

Wu, Feng ;

Wang, Shuai ;

Long, Hanling ;

Liang, Renli ;

Xu, Jin ;

Chen, Changqing ;

Tang, Zhiwu ;

He, Yunbin ;

Li, Mingkai ;

Feng, Zhechuan .

OPTICAL MATERIALS EXPRESS, 2017, 7 (11) :3944-3951

[5] ZnO nanowire field-effect transistor and oxygen sensing property [J].

Fan, ZY ;

Wang, DW ;

Chang, PC ;

Tseng, WY ;

Lu, JG .

APPLIED PHYSICS LETTERS, 2004, 85 (24) :5923-5925

[6]

Ha TH, 2007, J PHYS CHEM C, V111, P1123, DOI [10.1021/jp066454l, 10.1021/jp0664541]

[7] Structural and optical properties of non-polar A-plane ZnO films grown on R-plane sapphire substrates by plasma-assisted molecular-beam epitaxy [J].

Han, S. K. ;

Hong, S. K. ;

Lee, J. W. ;

Lee, J. Y. ;

Song, J. H. ;

Nam, Y. S. ;

Chang, S. K. ;

Minegishi, T. ;

Yao, T. .

JOURNAL OF CRYSTAL GROWTH, 2007, 309 (02) :121-127

[8] Phosphate-mediated ZnO nanosheets with a mosaic structure [J].

Imai, H ;

Iwai, S ;

Yamabi, S .

CHEMISTRY LETTERS, 2004, 33 (06) :768-769

[9] Ultraviolet-emitting ZnO nanowires synthesized by a physical vapor deposition approach [J].

Kong, YC ;

Yu, DP ;

Zhang, B ;

Fang, W ;

Feng, SQ .

APPLIED PHYSICS LETTERS, 2001, 78 (04) :407-409

[10] Nanobelts of semiconducting oxides [J].

Pan, ZW ;

Dai, ZR ;

Wang, ZL .

SCIENCE, 2001, 291 (5510) :1947-1949

← 1 2 3 →