Electrical and optical properties of ZnO thin films prepared by magnetron rf sputtering - influence of Al, Er and H

被引：28

作者：

Dimova-Malinovska, D. ^{[1
]}

Nichev, H. ^{[1
]}

Angelov, O. ^{[1
]}

Grigorov, V. ^{[1
]}

Kamenova, A. ^{[1
]}

机构：

[1] Bulgarian Acad Sci, Cent Lab Solar Energy & New Energy Sources, BU-1784 Sofia, Bulgaria

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2007年 / 42卷 / 1-6期

关键词：

zinc oxide; thin films; X-ray diffraction; optical band gap; urbach band tail;

D O I：

10.1016/j.spmi.2007.04.025

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The influence of Al, Er and H in ZnO thin films (ZnO:Al, ZnO:Er and ZnO:H) deposited by magnetron sputtering at different substrate temperatures, T-s, on their optical, structural and electrical properties was investigated. X-ray diffraction (XRD) analyses show an improvement of the crystalline structure with increasing T-s. The optical band gap, E-opt, of the films, from transmission and reflection spectra, ranged from 3.27 to 3.41 eV. The Urbach band tail width was also calculated. Incorporation of Al and Er resulted in a reduced and an increased resistivity, rho, respectively, and an increase in the Urbach tail width in both cases. However, sputtering in an Al + H-2 gas mixture led to an increase in p and an improvement in the structural order of the films. A discussion of the influence of T-s and of Al, Er and H on the properties is presented. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：123 / 128

页数：6

共 16 条

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