High p-type conductivity in cubic GaN/GaAs(113)A by using Be as the acceptor and O as the codopant

被引：132
作者：
Brandt, O
Yang, H
Kostial, H
Ploog, KH
机构：
[1] Paul-Drude-Inst. F. F., D-10117 Berlin
[2] Natl. Res. Ctr. Optoelectron. T., Institute of Semiconductors, Chinese Academy of Science, Beijing 100083
来源：
APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 18期
关键词：
D O I：
10.1063/1.117685
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
P-type room-temperature conductivities as high as 50/Omega cm are achieved in cubic GaN layers by the concept of reactive codoping. We use Be as the acceptor species and O as the reactive donor to render isolated Coulomb scatterers into dipole scatterers. This concept allows us to achieve high hole mobilities and thus p-type conductivities. (C) 1996 American Institute of Physics.
引用
收藏
页码：2707 / 2709
页数：3
相关论文
共 13 条
[11]   FEMTOSECOND GAIN DYNAMICS IN INGAAS/ALGAAS STRAINED-LAYER SINGLE-QUANTUM-WELL DIODE-LASERS [J].
SUN, CK ;
CHOI, HK ;
WANG, CA ;
FUJIMOTO, JG .
APPLIED PHYSICS LETTERS, 1993, 63 (01) :96-98
[12]   P-TYPE CONDUCTION IN MG-DOPED GAN AND AL0.08GA0.92N GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].
TANAKA, T ;
WATANABE, A ;
AMANO, H ;
KOBAYASHI, Y ;
AKASAKI, I ;
YAMAZAKI, S ;
KOIKE, M .
APPLIED PHYSICS LETTERS, 1994, 65 (05) :593-594
[13]  
Yang H, 1996, APPL PHYS LETT, V68, P244, DOI 10.1063/1.116474
12