Tuning the Threshold Voltage in Organic Thin-Film Transistors by Local Channel Doping Using Photoreactive Interfacial Layers

被引：45

作者：

Marchl, Marco ^{[2
]}

Edler, Matthias ^{[1
]}

Haase, Anja ^{[3
]}

Fian, Alexander ^{[3
]}

Trimmel, Gregor ^{[4
]}

Griesser, Thomas ^{[1
]}

Stadlober, Barbara ^{[3
]}

Zojer, Egbert ^{[2
]}

机构：

[1] Univ Leoben, Inst Chem Polymer Mat, A-8700 Leoben, Austria

[2] Graz Univ Technol, Inst Solid State Phys, A-8010 Graz, Austria

[3] Joanneum Res, Inst Nanostruct Mat & Photon, A-8160 Weiz, Austria

[4] Graz Univ Technol, Inst Chem & Technol Mat, A-8010 Graz, Austria

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 47期

基金：

奥地利科学基金会;

关键词：

FIELD-EFFECT TRANSISTORS; RING OSCILLATORS; CIRCUITS; MONOLAYERS; MATRIX; SHIFT;

D O I：

10.1002/adma.201002912

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The insertion of a thin photoacid generator layer between the dielectric and the active layer in organic thin-film transistors (OTFTs) allows control of the threshold voltage through UV illumination by means of interfacial channel doping. All p-type organic inverters can be realized by combining an OTFT working in depletion mode and one operating in enhancement mode.

引用

页码：5361 / +

页数：6

共 35 条

[1] PROTON TUNNELING REACTIONS IN PENTACENE DOPED BENZOIC-ACID CRYSTALS [J].

BARBARA, PF ;

VONBORCZYSKOWSKI, C ;

CASALEGNO, R ;

CORVAL, A ;

KRYSCHI, C ;

ROMANOWSKI, Y ;

TROMMSDORFF, HP .

CHEMICAL PHYSICS, 1995, 199 (2-3) :285-295

[2] LOGIC GATES MADE FROM POLYMER TRANSISTORS AND THEIR USE IN RING OSCILLATORS [J].

BROWN, AR ;

POMP, A ;

HART, CM ;

DELEEUW, DM .

SCIENCE, 1995, 270 (5238) :972-974

[3] A 13.56-MHz RFID system based on organic transponders [J].

Cantatore, Eugenio ;

Geuns, Thomas C. T. ;

Gelinck, Gerwin H. ;

van Veenendaal, Erik ;

Gruijthuijsen, Arnold F. A. ;

Schrijnemakers, Laurens ;

Drews, Steffen ;

de Leeuw, Dago M. .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2007, 42 (01) :84-92

[4] High-gain pentacene-based inverter achieved through high and low energy ultraviolet treatments [J].

Choi, Jeong-M. ;

Kim, Jae Hoon ;

Im, Seongil .

APPLIED PHYSICS LETTERS, 2007, 91 (08)

[5] Large-scale complementary integrated circuits based on organic transistors [J].

Crone, B ;

Dodabalapur, A ;

Lin, YY ;

Filas, RW ;

Bao, Z ;

LaDuca, A ;

Sarpeshkar, R ;

Katz, HE ;

Li, W .

NATURE, 2000, 403 (6769) :521-523

[6] Organic thin-film transistors: A review of recent advances [J].

Dimitrakopoulos, CD ;

Mascaro, DJ .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 2001, 45 (01) :11-27

[7] Continuous tuning of the threshold voltage of organic thin-film transistors by a chemically reactive interfacial layer [J].

Etschmaier, Harald ;

Pacher, Peter ;

Lex, Alexandra ;

Trimmel, Gregor ;

Slugovc, Christian ;

Zojer, Egbert .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2009, 95 (01) :43-48

[8] Gate dielectrics for organic field-effect transistors: New opportunities for organic electronics [J].

Facchetti, A ;

Yoon, MH ;

Marks, TJ .

ADVANCED MATERIALS, 2005, 17 (14) :1705-1725

[9] Flexible active-matrix displays and shift registers based on solution-processed organic transistors [J].

Gelinck, GH ;

Huitema, HEA ;

Van Veenendaal, E ;

Cantatore, E ;

Schrijnemakers, L ;

Van der Putten, JBPH ;

Geuns, TCT ;

Beenhakkers, M ;

Giesbers, JB ;

Huisman, BH ;

Meijer, EJ ;

Benito, EM ;

Touwslager, FJ ;

Marsman, AW ;

Van Rens, BJE ;

De Leeuw, DM .

NATURE MATERIALS, 2004, 3 (02) :106-110

[10] Tuning the threshold voltage by inserting a thin molybdenum oxide layer into organic field-effect transistors [J].

Guo, Yunlong ;

Liu, Yunqi ;

Di, Chong-an ;

Yu, Gui ;

Wu, Weiping ;

Ye, Shanghui ;

Wang, Ying ;

Xu, Xinjun ;

Sun, Yanming .

APPLIED PHYSICS LETTERS, 2007, 91 (26)

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