Gallium nitride diffractive microlenses using in ultraviolet micro-optics system

被引:3
|
作者
Hou, CH [1 ]
Li, MH
Chen, CC
Chang, JY
Sheu, JK
Chi, GC
Wu, C
Cheng, WT
Yeh, JH
机构
[1] Natl Cent Univ, Inst Opt Sci, Jungli 320, Taiwan
[2] Natl Cent Univ, Dept Phys, Jungli 320, Taiwan
[3] Canyon Mat Inc, San Diego, CA 92121 USA
[4] Nanoarchitect Res Corp, Hsinchu, Taiwan
关键词
diffractive microlens; gray-level mask; GaN; AlN; solar-blind; band-pass filter;
D O I
10.1007/s10043-003-0287-1
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In this work, diffractive microlenses were fabricated in GaN using a gray-level mask and inductively coupled plasma etching technique. We also propose to insert the GaN/AlN band- pass filter in the microlenses to enhance the ultraviolet/visible rejection ratio. Due to high transparency of GaN and AlN in UV, the microlenses can potentially be used in a UV micro-optics system such as for solar-blind detection. In the design example of this work, the structure may enhance the ultaviolet/visible rejection to 10(2).
引用
收藏
页码:287 / 289
页数:3
相关论文
共 5 条
  • [1] Gallium Nitride Diffractive Microlenses Using in Ultraviolet Micro-Optics System
    Chia-Hung Hou
    Ming-Hung Li
    Chii-Chang Chen
    Jenq-Yang Chang
    Jinn-Kong Sheu
    Gou-Chung Chi
    Chuck Wu
    Wei-Tai Cheng
    Jui-Hung Yeh
    Optical Review, 2003, 10 : 287 - 289
  • [2] Rapid planarization method by ultraviolet light irradiation for gallium nitride using platinum catalyst
    Asano, Hiroya
    Sadakuni, Shun
    Yagi, K.
    Sano, Y.
    Matsuyama, S.
    Okamoto, T.
    Tachibana, K.
    Yamauchi, K.
    EMERGING TECHNOLOGY IN PRECISION ENGINEERING XIV, 2012, 523-524 : 46 - +
  • [3] Direct and Continuous Liquid-Level Sensing Using Gallium Nitride Ultraviolet Photodetectors
    Sung, Jaebum
    So, Hongyun
    IEEE SENSORS JOURNAL, 2020, 20 (18) : 11007 - 11013
  • [4] Bias Dependence of Gallium Nitride Micro-Electro-Mechanical Systems Actuation Using a Two-Dimensional Electron Gas
    Ben Amar, Achraf
    Faucher, Marc
    Grimbert, Bertrand
    Cordier, Yvon
    Francois, Marc
    Tilmant, Pascal
    Werquin, Matthieu
    Zhang, Victor
    Ducatteau, Damien
    Gaquiere, Christophe
    Buchaillot, Lionel
    Theron, Didier
    APPLIED PHYSICS EXPRESS, 2012, 5 (06)
  • [5] Gallium Nitride Film Growth Using a Plasma Based Migration Enhanced Afterglow Chemical Vapor Deposition System
    Butcher, K. Scott A.
    Kemp, Brad W.
    Hristov, Ilian B.
    Terziyska, Penka
    Binsted, Peter W.
    Alexandrov, Dimiter
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (01)