Effect of twin spacing on the growth velocity of Si faceted dendrites

被引：14

作者：

Yang, Xinbo ^{[1
]}

Fujiwara, Kozo ^{[1
]}

Gotoh, Raira ^{[1
]}

Maeda, Kensaku ^{[1
]}

Nozawa, Jun ^{[1
]}

Koizumi, Haruhiko ^{[1
]}

Uda, Satoshi ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 17期

关键词：

UNDERCOOLED MELTS; GERMANIUM; MECHANISM; SILICON; SEMICONDUCTORS; WEB;

D O I：

10.1063/1.3501974

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth velocity of silicon < 110 > faceted dendrites as a function of the twin spacing was investigated by in situ observation. As the twin spacing increases, < 110 > dendrite growth velocity nonlinearly decreases. The theoretical < 110 > and < 112 > dendrite growth velocities were calculated on the basis of the modified re-entrant corner model, and the theoretical growth velocity of < 110 > dendrites was found to be slower than that of < 110 > dendrites under the same twin spacing. The theoretical < 110 > dendrite growth velocity fits quite well with the experimental results. (C) 2010 American Institute of Physics. [doi:10.1063/1.3501974]

引用

页数：3

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