First dc measurements of electrons on liquid helium:: the helium-FET

We present the first dc-measurements on a 2-dimensional (2D) electron system floating above a liquid He-4-film which covers a structured metal surface. With our arrangement of a source-, gate-, and drain-electrode a 2-dimensional charge transport is realized in analogy to a field-effect-transistor. The electrons which are moving along the x-direction due to different dc potentials are directly measured. This dc current, of the order of pA, is strongly dependent on the applied split-gate voltage. So the electrons were laterally confined to a narrow channel between the two gate electrodes. The effective width of the channel is reduced by the gate potential, so that a quasi-1D configuration can be realized. The measured electron current through the split-gate is analyzed and discussed on grounds of reduced dimensionality and 1D electron transport behaviour.