High resolution observation of defects at SiO2/4H-SiC interfaces using time-resolved scanning nonlinear dielectric microscopy

被引：2

作者：

Yamagishi, Y. ^{[1
]}

Cho, Y. ^{[1
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, 2-1-1 Aoba, Sendai, Miyagi 9808577, Japan

来源：

MICROELECTRONICS RELIABILITY | 2018年 / 88-90卷

关键词：

Interface states; Silicon carbide; Deep level transient spectroscopy; LEVEL TRANSIENT SPECTROSCOPY; INVERSION-LAYERS; POWER DEVICES; STATES; TRAPS;

D O I：

10.1016/j.microrel.2018.07.058

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High resolution observation of density of interface states (D-it) at SiO2/4H-SIC interfaces was performed by time-resolved scanning nonlinear dielectric microscopy (tr-SNDM). The sizes of the non-uniform contrasts observed in the map of D-it were in the order of several tens of nanometres, which are smaller than the value reported in the previous study (> 100 nm). The simulation of the tr-SNDM measurement suggested that the spatial resolution of tr-SNDM is down to the tip radius of the cantilever used for the measurement and can be smaller than the lateral spread of the depletion layer width.

引用

页码：242 / 245

页数：4

共 49 条

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