High resolution observation of defects at SiO2/4H-SiC interfaces using time-resolved scanning nonlinear dielectric microscopy

被引：2
|
作者：
Yamagishi, Y. [1 ]
Cho, Y. [1 ]
机构：
[1] Tohoku Univ, Elect Commun Res Inst, 2-1-1 Aoba, Sendai, Miyagi 9808577, Japan
来源：
MICROELECTRONICS RELIABILITY | 2018年 / 88-90卷
关键词：
Interface states; Silicon carbide; Deep level transient spectroscopy; LEVEL TRANSIENT SPECTROSCOPY; INVERSION-LAYERS; POWER DEVICES; STATES; TRAPS;
D O I：
10.1016/j.microrel.2018.07.058
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High resolution observation of density of interface states (D-it) at SiO2/4H-SIC interfaces was performed by time-resolved scanning nonlinear dielectric microscopy (tr-SNDM). The sizes of the non-uniform contrasts observed in the map of D-it were in the order of several tens of nanometres, which are smaller than the value reported in the previous study (> 100 nm). The simulation of the tr-SNDM measurement suggested that the spatial resolution of tr-SNDM is down to the tip radius of the cantilever used for the measurement and can be smaller than the lateral spread of the depletion layer width.
引用
收藏
页码：242 / 245
页数：4
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