共 39 条
- [34] 70 nm silicon-oxide-nitride-oxide-silicon nonvolatile memory devices using Fowler-Nordheim programming and hot hole erase method JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 43 (4B): : 2207 - 2210
- [35] Metal-oxide-nitride-oxide-semiconductor memory device with one-side halo implantation to enable low-voltage operation using hot-carrier injection JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (9A): : 6441 - 6445
- [36] New Observations on Hot Carrier induced Dynamic Variation in Nano-scaled SiON/Poly, HK/MG and FinFET devices based on On-the-fly HCI Technique: The Role of Single Trap induced Degradation 2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2014,
- [37] IMPROVEMENT OF LUMINOUS EFFICIENCY IN ZNS-TB, F THIN-FILM ELECTROLUMINESCENT DEVICES USING FERROELECTRIC PBTI3 AND SILICON-NITRIDE AS CARRIER ACCELERATING BUFFER LAYERS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (12): : 2446 - 2449