Annealing-induced interfacial reactions and the effects on the electrical properties of Ga doped ZnO/CuxS contacts to p-GaN

被引：2

作者：

Gu, Wen ^{[1
,2
]}

Wu, Xingyang ^{[1
]}

Song, Peng ^{[1
,2
]}

Zhang, Jianhua ^{[1
,2
]}

机构：

[1] Shanghai Univ, Sch Mechatron Engn & Automat, Shanghai, Peoples R China

[2] Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2015年 / 331卷

基金：

中国国家自然科学基金;

关键词：

Ga-doped ZnO; Ohmic contact; p-GaN; Copper sulfide; Copper oxidea; LIGHT-EMITTING-DIODES; OHMIC CONTACT; COPPER SULFIDE; OXIDE; FILMS; ZNO; OUTPUT; POWER; TIME; CU;

D O I：

10.1016/j.apsusc.2015.01.049

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Ga-doped ZnO (GZO) contacts to p-GaN were investigated by using CuxS interlayers under different annealing temperatures. It is shown that the GZO/CuxS contacts annealed at 300 and 400 degrees C for 3 min in air exhibited non-ohmic characteristics. However, annealing the contacts at 500 and 600 degrees C in air resulted in linear current-voltage characteristics. The lowest specific contact resistivity of 1.66 x 10(-2) Omega cm(2) was obtained for the contact annealed at 500 degrees C. To account for the formation mechanism of the ohmic contact, AES and XPS were used to analyze the interfacial properties of the GZO/CuxS/p-GaN and CuxS/p-GaN interfaces, respectively. The possible reasons were discussed in detail, suggesting that the interfacial reactions and atomic diffusions are thought to be responsible for forming such a low contact resistance. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：156 / 160

页数：5

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