Effect of the variation of temperature on the structural and optical properties of ZnO thin films prepared on Si (111) substrates using PLD

被引:51
作者
Wang, ZY [1 ]
Hu, LZ
Zhao, J
Sun, J
Wang, ZJ
机构
[1] Dalian Univ Technol, Dept Phys, State Key Lab Mat Modificat Laser Ion Electron Be, Dalian 116024, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
基金
中国国家自然科学基金;
关键词
ZnO thin films; PLD; (002) peaks; PL spectra;
D O I
10.1016/j.vacuum.2004.12.014
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
ZnO thin films were prepared on Si (1 11) substrates at various temperatures from 250 to 700 degrees C using pulsed laser deposition (PLD) technique in order to investigate the structural and optical properties of the films. The structural and morphological properties of the films were investigated by XRD and SEM measurements, respectively. The quality of the films was improved with the increase of the temperature. By XRD patterns the FWHMs of the (0 0 2) peaks of the ZnO films became narrower when the temperatures were above 500 degrees C. The FWHMs of the peaks of (0 0 2) of the films were as narrow as about 0. 19 degrees when films were grown at 650 and 700 degrees C. This indicates the superior crystallinity of the films. The optical properties of the films were studied by photoluminescence spectra using a 325 nm He-Cd laser. The two strongest UV peaks were found at 377.9 nm from ZnO films grown at 650 and 700 degrees C. This result is consistent with that of the XRD investigation. Broad bands in visible region from 450 to 550 nm were also observed. Our works suggest that UV emissions have close relations with not only the crystallinity but also the stoichiometry of the ZnO films. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码:53 / 57
页数:5
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