Crystallization of multicrystalline silicon from reusable silicon nitride crucibles: Material properties and solar cell efficiency

被引：11

作者：

Bellman, M. P. ^{[1
]}

Stokkan, G. ^{[1
]}

Ciftja, A. ^{[2
]}

Denafas, J. ^{[3
]}

Kaden, T. ^{[4
]}

机构：

[1] SINTEF Ind, N-7465 Trondheim, Norway

[2] Steuler Solar Technol, N-3905 Porsgrunn, Norway

[3] UAB Soli Tek R&D, LT-08412 Vilnius, Lithuania

[4] Fraunhofer Technol Ctr Semicond Mat THM, D-09599 Freiberg, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2018年 / 504卷

基金：

欧盟地平线“2020”;

关键词：

Impurities; Growth from melt; Solar cell; DIRECTIONAL SOLIDIFICATION;

D O I：

10.1016/j.jcrysgro.2018.09.026

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this paper experimental results on High Performance multicrystalline silicon ingots (HPmc-Si) grown from reusable silicon nitride crucibles are presented. Five ingots are grown from the same crucible and the material is analyzed for carbon and oxygen, and metallic impurities, by means of Fourier transform infrared (FTIR) spectroscopy and Neutron Activation Analysis (NAA), respectively. Microwave Photoconductance Decay (mu W-PCD) and Quasi-Steady-State Photoconductance (QSSPC) is applied on samples to reveal the resulting charge carrier lifetime distribution. Full-area aluminum back surface field (BSF) solar cells are processed from 156 mm x 156 mm wafers and the solar cell efficiency is analyzed. Material properties and solar cell efficiencies are comparable to reference material grown from high purity electronic grade (EG) quartz crucibles. Obtained results are discussed with respect to results published recently.

引用

页码：51 / 55

页数：5

共 11 条

[1]

ASTM, 1993, STAND TEST METH INT

[2]

ASTM, 1993, STAND TEST METH SUBS

[3] Dynamic simulation of impurity transport and chemical reactions in a Bridgman furnace for directional solidification of multi-crystalline silicon [J].