Metal-organic vapor phase epitaxial growth of high-quality ZnO films on Al2O3(00.1)

被引：89
|
作者：
Park, WI [1 ]
An, SJ [1 ]
Yi, GC [1 ]
Jang, HM [1 ]
机构：
[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea
来源：
JOURNAL OF MATERIALS RESEARCH | 2001年 / 16卷 / 05期
关键词：
D O I：
10.1557/JMR.2001.0190
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
High-quality ZnO thin films were grown epitaxially at 250-550 degreesC Al2O3(00.1) substrates using low-pressure metalorganic vapor phase epitaxy. The reactants for the growth were diethylzinc and oxygen. Growth temperature, one of the important experimental parameters for epitaxial layers, was optimized. The films grown at 500 degreesC exhibited good crystallinity and strong ultraviolet absorption and emission. Photoluminescence spectra of the films showed a dominant excitonic emission with a weak deep level emission. More importantly, a strong stimulated emission peak was observed even at room temperature.
引用
收藏
页码：1358 / 1362
页数：5
相关论文
共 50 条
  • [31] Surface modification of MgAl2O4 (111) for growth of high-quality ZnO epitaxial films
    Zeng, Z. Q.
    Liu, Y. Z.
    Yuan, H. T.
    Mei, Z. X.
    Du, X. L.
    Jia, J. F.
    Xue, Q. K.
    Zhang, Z.
    APPLIED PHYSICS LETTERS, 2007, 90 (08)
  • [32] Growth of wurtzite GaN films on α-Al2O3 substrates using light-radiation heating metal-organic chemical vapor deposition
    Shen, B
    Zhou, YG
    Chen, ZZ
    Chen, P
    Zhang, R
    Shi, Y
    Zheng, YD
    Tong, W
    Park, W
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1999, 68 (05): : 593 - 596
  • [33] Growth of wurtzite GaN films on α-Al2O3 substrates using light-radiation heating metal-organic chemical vapor deposition
    Shen, B.
    Zhou, Y.G.
    Chen, Z.Z.
    Chen, P.
    Zhang, R.
    Shi, Y.
    Zheng, Y.D.
    Tong, W.
    Park, W.
    Applied Physics A: Materials Science and Processing, 1999, 68 (05): : 593 - 596
  • [34] Growth and characterization of β-Ga2O3 thin films grown on off-angled Al2O3 substrates by metal-organic chemical vapor deposition
    Zhang, Yabao
    Zheng, Jun
    Ma, Peipei
    Zheng, Xueyi
    Liu, Zhi
    Zuo, Yuhua
    Li, Chuanbo
    Cheng, Buwen
    JOURNAL OF SEMICONDUCTORS, 2022, 43 (09)
  • [35] Growth and characterization of β-Ga2O3 thin films grown on off-angled Al2O3 substrates by metal-organic chemical vapor deposition
    Yabao Zhang
    Jun Zheng
    Peipei Ma
    Xueyi Zheng
    Zhi Liu
    Yuhua Zuo
    Chuanbo Li
    Buwen Cheng
    Journal of Semiconductors, 2022, 43 (09) : 56 - 61
  • [36] Epitaxial growth of Ga2O3 thin films on MgO (110) substrate by metal-organic chemical vapor deposition
    Mi, Wei
    Ma, Jin
    Zhu, Zhen
    Luan, Caina
    Lv, Yu
    Xiao, Hongdi
    JOURNAL OF CRYSTAL GROWTH, 2012, 354 (01) : 93 - 97
  • [37] High temperature epitaxial growth and structure of Nb films on α–Al2O3(0001)
    Thomas Wagner
    Journal of Materials Research, 1998, 13 : 693 - 702
  • [38] High temperature epitaxial growth and structure of Nb films on α-Al2O3(0001)
    Wagner, T
    JOURNAL OF MATERIALS RESEARCH, 1998, 13 (03) : 693 - 702
  • [39] Growth of epitaxial sodium-bismuth-titanate films by metal-organic chemical vapor phase deposition
    Schwarzkopf, J.
    Schmidbauer, M.
    Duk, A.
    Kwasniewski, A.
    Bin Anooz, S.
    Wagner, G.
    Devi, A.
    Fornari, R.
    THIN SOLID FILMS, 2011, 520 (01) : 239 - 244
  • [40] Epitaxial growth of RuO2 thin films by metal-organic chemical vapor deposition
    Lu, P
    He, S
    Li, FX
    Jia, QX
    THIN SOLID FILMS, 1999, 340 (1-2) : 140 - 144
12345