Metal-organic vapor phase epitaxial growth of high-quality ZnO films on Al2O3(00.1)

被引：89
|
作者：
Park, WI [1 ]
An, SJ [1 ]
Yi, GC [1 ]
Jang, HM [1 ]
机构：
[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea
来源：
JOURNAL OF MATERIALS RESEARCH | 2001年 / 16卷 / 05期
关键词：
D O I：
10.1557/JMR.2001.0190
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
High-quality ZnO thin films were grown epitaxially at 250-550 degreesC Al2O3(00.1) substrates using low-pressure metalorganic vapor phase epitaxy. The reactants for the growth were diethylzinc and oxygen. Growth temperature, one of the important experimental parameters for epitaxial layers, was optimized. The films grown at 500 degreesC exhibited good crystallinity and strong ultraviolet absorption and emission. Photoluminescence spectra of the films showed a dominant excitonic emission with a weak deep level emission. More importantly, a strong stimulated emission peak was observed even at room temperature.
引用
收藏
页码：1358 / 1362
页数：5
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